InSbN based p-n junctions for infrared photodetection
InSbN based p-n junctions for infrared photodetection
- Author(s): X.Z. Chen ; D.H. Zhang ; W. Liu ; Y. Wang ; J.H. Li ; A.T.S. Wee ; A. Ramam
- DOI: 10.1049/el.2010.0713
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- Author(s): X.Z. Chen 1 ; D.H. Zhang 1 ; W. Liu 1 ; Y. Wang 1 ; J.H. Li 1 ; A.T.S. Wee 2 ; A. Ramam 3
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View affiliations
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Affiliations:
1: Department of Electrical & Electronic Engineering, Nanyang Technology University, Singapore
2: Department of Physics, National University of Singapore, Singapore
3: Department of Physics, Institute of Materials Research and Engineering, Singapore
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Affiliations:
1: Department of Electrical & Electronic Engineering, Nanyang Technology University, Singapore
- Source:
Volume 46, Issue 11,
27 May 2010,
p.
787 – 788
DOI: 10.1049/el.2010.0713 , Print ISSN 0013-5194, Online ISSN 1350-911X
InSbN p-n junctions prepared by N+ and Mg+ implantation into InSb wafers for long wavelength infrared photodetection are demonstrated for the first time. The detection wavelength can be controlled by monitoring the implanted nitrogen. The measured peak wavelengths are consistent with the bandgaps of the alloys calculated using a 10-band k·p model based on In-N bond.
Inspec keywords: energy gap; III-V semiconductors; indium alloys; photodetectors; ion implantation; p-n junctions; antimony alloys; wide band gap semiconductors; infrared detectors
Other keywords:
Subjects: Semiconductor doping; Photodetectors; Semiconductor junctions
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