Broadband superluminescent diodes with height-engineered InAs-GaAs quantum dots

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Broadband superluminescent diodes with height-engineered InAs-GaAs quantum dots

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© National Research Council Canada
Published

Ultra-wide bandwidth superluminescent diodes (SLDs) using multiple layers of InAs-GaAs quantum dots (QDs) with engineered height are realised. A tilted and tapered active region is used to reduce the effective reflectivity from the facets. A 3 dB emission bandwidth up to 140 nm centred at 1100 nm is achieved at a continuous-wave drive-current of 600 mA. It is shown that varying the height of the dots from one layer of dots to another within the active region considerably broadens the emission spectrum of the QD-SLDs compared to those made of similar layers of inhomogeneous QDs.

Inspec keywords: gallium arsenide; indium compounds; III-V semiconductors; superluminescent diodes; semiconductor quantum dots

Other keywords: emission spectrum; wavelength 1100 nm; tapered active region; InAs-GaAs; emission bandwidth; ultrawide broadband superluminescent diodes; current 600 mA; continuous-wave drive-current; height-engineered quantum dots; reflectivity

Subjects: Light emitting diodes

References

    1. 1)
    2. 2)
      • S. Haffouz , S. Raymond , Z.G. Lu , P.J. Barrios , D. Roy-Guay , X. Wu , J.R. Liu , D. Poitras , Z. Wasilewski . Growth and fabrication of quantum dots superluminescent diodes using the indium-flush technique: a new approach in controlling the bandwidth. J. Cryst. Growth , 1803 - 1806
    3. 3)
      • B. Povazay , B. Hermann , A. Unterhuber , B. Hofer , H. Sattmann , F. Zeiler , J.E. Morgan , C. Falkner-Radler , C. Glittenberg , S. Blinder , W. Drexler . Three-dimensional optical coherence tomography at 1050 nm versus 800 nm in retinal pathologies: enhanced performance and choroidal penetration in cataract. J. Biomed. Opt. , 4 , 04211 - 041244-7
    4. 4)
    5. 5)
      • X.Q. Lv , N. Liu , P. Jin , Z.-G. Wang . Broadband emitting superluminescent diodes with InAs quantum dots in AlGaAs Matrix. IEEE Photonics Technol. Lett. , 20 , 1742 - 11744
    6. 6)
    7. 7)
    8. 8)
    9. 9)
    10. 10)
      • Y.C. Yoo , I.K. Han , J.I. Lee . High power broadband superluminescent diodes with chirped multiple quantum dots. Electron. Lett. , 19 , 1045 - 1047
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