Broadband superluminescent diodes with height-engineered InAs-GaAs quantum dots

Broadband superluminescent diodes with height-engineered InAs-GaAs quantum dots

For access to this article, please select a purchase option:

Buy article PDF
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Your details
Why are you recommending this title?
Select reason:
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

Ultra-wide bandwidth superluminescent diodes (SLDs) using multiple layers of InAs-GaAs quantum dots (QDs) with engineered height are realised. A tilted and tapered active region is used to reduce the effective reflectivity from the facets. A 3 dB emission bandwidth up to 140 nm centred at 1100 nm is achieved at a continuous-wave drive-current of 600 mA. It is shown that varying the height of the dots from one layer of dots to another within the active region considerably broadens the emission spectrum of the QD-SLDs compared to those made of similar layers of inhomogeneous QDs.


    1. 1)
      • B. Povazay , B. Hermann , A. Unterhuber , B. Hofer , H. Sattmann , F. Zeiler , J.E. Morgan , C. Falkner-Radler , C. Glittenberg , S. Blinder , W. Drexler . Three-dimensional optical coherence tomography at 1050 nm versus 800 nm in retinal pathologies: enhanced performance and choroidal penetration in cataract. J. Biomed. Opt. , 4 , 04211 - 041244-7
    2. 2)
    3. 3)
      • X.Q. Lv , N. Liu , P. Jin , Z.-G. Wang . Broadband emitting superluminescent diodes with InAs quantum dots in AlGaAs Matrix. IEEE Photonics Technol. Lett. , 20 , 1742 - 11744
    4. 4)
    5. 5)
      • Y.C. Yoo , I.K. Han , J.I. Lee . High power broadband superluminescent diodes with chirped multiple quantum dots. Electron. Lett. , 19 , 1045 - 1047
    6. 6)
    7. 7)
    8. 8)
      • S. Haffouz , S. Raymond , Z.G. Lu , P.J. Barrios , D. Roy-Guay , X. Wu , J.R. Liu , D. Poitras , Z. Wasilewski . Growth and fabrication of quantum dots superluminescent diodes using the indium-flush technique: a new approach in controlling the bandwidth. J. Cryst. Growth , 1803 - 1806
    9. 9)
    10. 10)

Related content

This is a required field
Please enter a valid email address