Vertical-coupled SiGe double quantum dots
Vertical-coupled SiGe double quantum dots
- Author(s): C.B. Li ; G. Yamahata ; J.S. Xia ; H. Mizuta ; S. Oda ; Y. Shiraki
- DOI: 10.1049/el.2010.0494
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- Author(s): C.B. Li 1 ; G. Yamahata 1 ; J.S. Xia 2 ; H. Mizuta 3 ; S. Oda 1 ; Y. Shiraki 2
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View affiliations
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Affiliations:
1: Quantum Nanoelectronics Research Center, Tokyo Institute of Technology and SORST, Japan Science and Technology, Tokyo, Japan
2: Research Center for Silicon Nano-science, Advanced Research Laboratories, Tokyo City University, Tokyo, Japan
3: School of Electronics and Computer Science, The University of Southampton, Southampton, United Kingdom
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Affiliations:
1: Quantum Nanoelectronics Research Center, Tokyo Institute of Technology and SORST, Japan Science and Technology, Tokyo, Japan
- Source:
Volume 46, Issue 13,
24 June 2010,
p.
940 – 941
DOI: 10.1049/el.2010.0494 , Print ISSN 0013-5194, Online ISSN 1350-911X
© The Institution of Engineering and Technology
Published
The fabrication of vertical-coupled SiGe double quantum dots and hole transport characteristics at low temperature are presented. By modulating back and side gate voltages, coherent coupling is observed.
Inspec keywords: quantum dots; Ge-Si alloys
Other keywords:
References
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