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Vertical-coupled SiGe double quantum dots

Vertical-coupled SiGe double quantum dots

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The fabrication of vertical-coupled SiGe double quantum dots and hole transport characteristics at low temperature are presented. By modulating back and side gate voltages, coherent coupling is observed.

References

    1. 1)
    2. 2)
      • M. Manoharan , Y. Tsuchiya , S. Oda , H. Mizuta . Stochastic Coulomb blockade in coupled asymmetric silicon dots formed by pattern-dependent oxidation. Appl. Phys. Lett. , 9
    3. 3)
    4. 4)
      • Y.J. Hu , H.O.H. Churchill , D.J. Reilly , J. Xiang , C.M. Lieber , C.M. Marcus . A Ge/Si heterostructure nanowire-based double quantum dot with integrated charge sensor. Nat. Nanotechnol. , 622 - 625
    5. 5)
    6. 6)
      • X.H. Sun , G. Calebotta , B. Yu , G. Selvaduraym , M. Meyyappan . Synthesis of germanium nanowires on insulator catalyzed by indium or antimony. J. Vac. Sci. Technol. B , 2 , 415 - 420
    7. 7)
      • P.A. Cain , H. Ahmed , D.A. Williams . Conductance peak splitting in hole transport through a SiGe double quantum dot. Appl. Phys. Lett. , 23 , 3624 - 3626
    8. 8)
      • N. Shaji , C.B. Simmons , M. Thalakulam , L.J. Klein , H. Qin , H. Luo , D.E. Savage , M.G. Lagally , A.J. Rimberg , R. Joynt , M. Friesen , R.H. Blick , S.N. Coppersmith , M.A. Eriksson . Spin blockade and lifetime-enhanced transport in a few-electron Si/SiGe double quantum dot. Nat. Phys. , 7 , 540 - 544
    9. 9)
      • S. Horiguchi , M. Nagase , K. Shiraishi , H. Kageshima , Y. Takahashi , K. Murase . Mechanism of potential profile formation in silicon single-electron transistors fabricated using pattern-dependent oxidation. Jpn. J. Appl. Phys. , L29 - L32
    10. 10)
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