Technique to calculate geometric spontaneous emission factor from amplified spontaneous emission spectrum of FP semiconductor laser
Technique to calculate geometric spontaneous emission factor from amplified spontaneous emission spectrum of FP semiconductor laser
- Author(s): D.C. Byrne ; W.H. Guo ; Q.Y. Lu ; B. Corbett ; J.F. Donegan
- DOI: 10.1049/el.2010.0421
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- Author(s): D.C. Byrne 1 ; W.H. Guo 1 ; Q.Y. Lu 1 ; B. Corbett 2 ; J.F. Donegan 1
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View affiliations
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Affiliations:
1: Semiconductor Photonics Group, School of Physics, Trinity College Dublin, Ireland
2: Photonics Group, Tyndall National Institute, Cork, Ireland
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Affiliations:
1: Semiconductor Photonics Group, School of Physics, Trinity College Dublin, Ireland
- Source:
Volume 46, Issue 14,
8 July 2010,
p.
1017 – 1019
DOI: 10.1049/el.2010.0421 , Print ISSN 0013-5194, Online ISSN 1350-911X
The geometric spontaneous emission factor is calculated from the amplified spontaneous emission spectrum of a Fabry-Pérot (FP) laser diode. The optical loss and quasi-Fermi level separation are determined first using the Fourier transform method with the influence from the instrument response function being taken into account. From this the geometric spontaneous emission factor is calculated to be 5.95×10−3 just below laser threshold.
Inspec keywords: optical losses; Fabry-Perot interferometers; Fourier transforms; semiconductor lasers; superradiance
Other keywords:
Subjects: Lasing action in semiconductors; Quantum optics; Design of specific laser systems; Semiconductor lasers; Optical elements, devices and systems
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