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Room temperature λ∼3.3 µm InP-based InGaAs/AlAs(Sb) quantum cascade lasers

Room temperature λ∼3.3 µm InP-based InGaAs/AlAs(Sb) quantum cascade lasers

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Room temperature strain-compensated In0.7Ga0.3As/AlAs(Sb)/InP quantum cascade lasers operating at λ∼3.3 µm are reported. 20 µm wide- and 1.5 mm-long devices with as-cleaved facets deliver more than 1 W peak optical power per facet at 300 K. A detailed comparison of the device characteristics for the lasers fabricated from various parts of the 2-inch wafer has been performed.

References

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      • S.Y. Zhang , D.G. Revin , J.W. Cockburn , K. Kennedy , A.B. Krysa , M. Hopkinson . λ∼3.1 µm room temperature InGaAs/AlAsSb/InP quantum cascade lasers. Appl. Phys. Lett.
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