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DC electrical performance improvement of AlGaAs/InGaAs PHEMTs by using low thermal neutron radiation dose

DC electrical performance improvement of AlGaAs/InGaAs PHEMTs by using low thermal neutron radiation dose

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© The Institution of Engineering and Technology
Published

An original method is presented to improve DC electrical performance of AlGaAs/InGaAs PHEMTs by using a low neutron radiation dose. An increase of the drain–source saturation current, a decrease of the knee voltage and a reduction of the leakage current of the Schottky contact are observed without degrading the current-gain cutoff frequency when the devices are irradiated with a neutron radiation dose of 1.2×1010 neutrons/cm2.

Inspec keywords: III-V semiconductors; heat radiation; leakage currents; gallium arsenide; high electron mobility transistors; indium compounds; aluminium compounds; neutron effects; Schottky barriers

Other keywords: knee voltage; current-gain cutoff frequency; leakage current; Schottky contact; PHEMT; DC electrical performance; drain-source saturation current; AlGaAs-InGaAs; low thermal neutron radiation dose

Subjects: Radiation effects (semiconductor technology); Other field effect devices

References

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