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DC electrical performance improvement of AlGaAs/InGaAs PHEMTs by using low thermal neutron radiation dose

DC electrical performance improvement of AlGaAs/InGaAs PHEMTs by using low thermal neutron radiation dose

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An original method is presented to improve DC electrical performance of AlGaAs/InGaAs PHEMTs by using a low neutron radiation dose. An increase of the drain–source saturation current, a decrease of the knee voltage and a reduction of the leakage current of the Schottky contact are observed without degrading the current-gain cutoff frequency when the devices are irradiated with a neutron radiation dose of 1.2×1010 neutrons/cm2.

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