Phase-change memory device fabricated using solid-state alloying

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Phase-change memory device fabricated using solid-state alloying

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A novel fabrication method for phase-change memory devices using solid-state alloying is presented, which enables programming current reduction. Preformed pores, exposing germanium layers, were filled with antimony–tellurium layers, and germanium–antimony–tellurium (GST) phase-change layers were prepared by the solid-state alloying of germanium and antimony–tellurium. Programming currents for reset and set operations were drastically reduced compared to those of a control device. The decreased programming currents are attributed to a small-sized programmable volume and the existence of GST thermal barriers.

Inspec keywords: antimony; phase change materials; germanium; phase change memories; alloying; tellurium

Other keywords: current reduction; small-sized programmable volume; Ge-Sb-Te; germanium layers; germanium-antimony-tellurium phase-change layers; GST thermal barriers; phase-change memory device; Sb-Te; solid-state alloying; antimony-tellurium layers

Subjects: Memory circuits; Semiconductor storage

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