Phase-change memory device fabricated using solid-state alloying
A novel fabrication method for phase-change memory devices using solid-state alloying is presented, which enables programming current reduction. Preformed pores, exposing germanium layers, were filled with antimony–tellurium layers, and germanium–antimony–tellurium (GST) phase-change layers were prepared by the solid-state alloying of germanium and antimony–tellurium. Programming currents for reset and set operations were drastically reduced compared to those of a control device. The decreased programming currents are attributed to a small-sized programmable volume and the existence of GST thermal barriers.
