Influence of O2/Ar ratio on properties of transparent conductive tantalum-doped ZnO films
Influence of O2/Ar ratio on properties of transparent conductive tantalum-doped ZnO films
- Author(s): F. Cao ; Y. Wang ; D. Liu
- DOI: 10.1049/el.2009.3717
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- Author(s): F. Cao 1 ; Y. Wang 1 ; D. Liu 1
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Affiliations:
1: State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, People's Republic of China
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Affiliations:
1: State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, People's Republic of China
- Source:
Volume 45, Issue 6,
12 March 2009,
p.
324 – 326
DOI: 10.1049/el.2009.3717 , Print ISSN 0013-5194, Online ISSN 1350-911X
Tantalum-doped ZnO transparent conductive films are deposited on glass substrates by radio frequency sputtering at 300°C. The influence of O2/Ar ratio on the structural, electrical, and optical properties of the as-deposited films is investigated. The lowest resistivity of 4.1×10−4 Ωcm is obtained from the film prepared at the O2/Ar ratio of 1/12. The average optical transmittance of the films is over 90%.
Inspec keywords: sputter deposition; wide band gap semiconductors; glass; electrical resistivity; II-VI semiconductors; semiconductor doping; tantalum; semiconductor thin films; zinc compounds; electrical conductivity
Other keywords:
Subjects: Optical properties of II-VI and III-V semiconductors (thin films, low-dimensional and nanoscale structures); Semiconductor doping; Deposition by sputtering; Thin film growth, structure, and epitaxy; Doping and implantation of impurities; Sputter deposition; Electrical properties of II-VI and III-V semiconductors (thin films, low-dimensional and nanoscale structures); II-VI and III-V semiconductors
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