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Influence of O2/Ar ratio on properties of transparent conductive tantalum-doped ZnO films

Influence of O2/Ar ratio on properties of transparent conductive tantalum-doped ZnO films

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Tantalum-doped ZnO transparent conductive films are deposited on glass substrates by radio frequency sputtering at 300°C. The influence of O2/Ar ratio on the structural, electrical, and optical properties of the as-deposited films is investigated. The lowest resistivity of 4.1×10−4 Ωcm is obtained from the film prepared at the O2/Ar ratio of 1/12. The average optical transmittance of the films is over 90%.

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