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Second-order optical nonlinearity in thermally poled phosphorus-doped silicon dioxide thin-film waveguides

Second-order optical nonlinearity in thermally poled phosphorus-doped silicon dioxide thin-film waveguides

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A phosphorus-doped silicon dioxide nonlinear planar waveguide on a GE124 fused silica substrate using plasma-enhanced chemical vapour deposition and thermal poling technique is implemented. The stable second-order nonlinear susceptibility induced in the waveguide is estimated to be around 0.58 pm/V by means of hydrofluoric acid etching, Maker's fringe measurement and grid search curve fitting using a double-step nonlinear profile. This nonlinear planar waveguide may be applied to fabricate an electrooptic device on the silicon photonic chip.

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      • Chen, C.C.: `Fabrication of P-doped SiO', 2003, Master, National Tsing Hua University,Taiwan.
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http://iet.metastore.ingenta.com/content/journals/10.1049/el.2009.3597
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