High VOC dye sensitised solar cell using RF-sputtered TiO2 compact layers
Presented is a dye sensitised solar cell (DSSC) with very high open circuit voltage (Voc) and shunt resistance (RSH) using an RF-sputtered titanium dioxide compact layer. TiO2 films of about 100 nm thickness were RF-sputtered at room temperature on indium-tin-oxide coated glass substrates and used as the compact layer for fabrication of DSSCs. Current-voltage characteristics of the DSSCs under AM 1.5 illumination condition showed a very high VOC of 780 mV, high RSH of 400 KΩ, short circuit current density (Jsc) of 12.3 mA/cm2, and fill factor (FF) of 0.61, while the VOC, RSH, JSC, and FF of a DSSC fabricated using a conventional sol-gel processed TiO2 compact layer were 520 mV, 463 Ω, 5.4 mA/cm2, and 0.46, respectively.
