InGaN pin homojunction solar cells with different In content (x=0.02/0.12/0.15) have been fabricated. The measured open-circuit voltages (Voc) are 2.24, 1.34 and 0.96 V, respectively. All the devices exhibit large fill factors of more than 64% and enhanced response in the short wavelength region, suggesting the high potential of InGaN-based pin homojunction solar cells.
Inspec keywords: gallium compounds; p-n junctions; solar cells; photovoltaic effects; III-V semiconductors; wide band gap semiconductors; indium compounds
Other keywords:
Subjects: Electrical properties of semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions; Semiconductor junctions; Photoelectric conversion; solar cells and arrays; Photoconduction and photovoltaic effects; photodielectric effects; Solar cells and arrays
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