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Favourable photovoltaic effects in InGaN pin homojunction solar cell

Favourable photovoltaic effects in InGaN pin homojunction solar cell

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InGaN pin homojunction solar cells with different In content (x=0.02/0.12/0.15) have been fabricated. The measured open-circuit voltages (Voc) are 2.24, 1.34 and 0.96 V, respectively. All the devices exhibit large fill factors of more than 64% and enhanced response in the short wavelength region, suggesting the high potential of InGaN-based pin homojunction solar cells.

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