A resonant cavity light emitting diode combined with a submicron oxide current aperture, to pump individual InGaAs/GaAs quantum dots electrically, has been designed and fabricated. Pulsed correlation measurements demonstrated true single photon emission with g2(0)=0 at a rate of 1 GHz.
Inspec keywords: gallium arsenide; semiconductor quantum dots; light emitting diodes; semiconductor device models; indium compounds; III-V semiconductors
Other keywords:
Subjects: Semiconductor superlattices, quantum wells and related structures; Semiconductor device modelling, equivalent circuits, design and testing; Light emitting diodes
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