P and B doped Si resonant interband tunnel diodes with as-grown negative differential resistance

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P and B doped Si resonant interband tunnel diodes with as-grown negative differential resistance

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Robust Si resonant interband tunnel diodes have been designed and tested that demonstrate as-grown negative differential resistance at room temperature with peak-to-valley current ratios (PVCR) up to 2.5 and peak current densities in the order of 1 kA/cm2. The as-grown Si p+in+ structures were synthesised using solid source molecular beam epitaxy, incorporating B and P δ-doped layers. Both structures have shown thermal stability after 1 min post-growth anneals up through 675°C and the PVCR improves to 2.8 for a 575°C 1 min anneal.

Inspec keywords: boron; resonant tunnelling diodes; semiconductor epitaxial layers; thermal stability; elemental semiconductors; semiconductor doping; annealing; phosphorus; silicon; current density

Other keywords: annealing; δ-doped layer; time 1 min; current density; temperature 293 K to 298 K; temperature 675 degC; temperature 575 degC; as-grown negative differential resistance; thermal stability; p+in+ structure; Si:P; solid source molecular beam epitaxy; robust silicon resonant interband tunnel diode; peak-valley current ratio; Si:B; PVCR

Subjects: Semiconductor doping; Junction and barrier diodes; Quantum interference devices; Annealing processes in semiconductor technology

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