P and B doped Si resonant interband tunnel diodes with as-grown negative differential resistance

P.E. Thompson; G.G. Jernigan; S.-Y. Park; R. Yu; R. Anisha; P.R. Berger; D. Pawlik; R. Krom; S.L. Rommel

P and B doped Si resonant interband tunnel diodes with as-grown negative differential resistance

Access Full Text

P and B doped Si resonant interband tunnel diodes with as-grown negative differential resistance

Author(s): P.E. Thompson ; G.G. Jernigan ; S.-Y. Park ; R. Yu ; R. Anisha ; P.R. Berger ; D. Pawlik ; R. Krom ; S.L. Rommel
DOI: 10.1049/el.2009.1007

For access to this article, please select a purchase option:

Buy article PDF

Buy Knowledge Pack

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership

Recommend Title Publication to library

Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

Author(s): P.E. Thompson ¹ ; G.G. Jernigan ¹ ; S.-Y. Park ² ; R. Yu ² ; R. Anisha ² ; P.R. Berger ² ; D. Pawlik ³ ; R. Krom ³ ; S.L. Rommel ³
- Affiliations: 1: Code 6812, Naval Research Laboratory, Washington, USA
  2: Department of Electrical & Computer Engineering, The Ohio State University, Columbus, USA
  3: Microelectronic Engineering Department, Rochester Institute of Technology, Rochester, USA
Source: Volume 45, Issue 14, 2 July 2009, p. 759 – 761
DOI: 10.1049/el.2009.1007 , Print ISSN 0013-5194, Online ISSN 1350-911X

Published

Robust Si resonant interband tunnel diodes have been designed and tested that demonstrate as-grown negative differential resistance at room temperature with peak-to-valley current ratios (PVCR) up to 2.5 and peak current densities in the order of 1 kA/cm². The as-grown Si p⁺in⁺ structures were synthesised using solid source molecular beam epitaxy, incorporating B and P δ-doped layers. Both structures have shown thermal stability after 1 min post-growth anneals up through 675°C and the PVCR improves to 2.8 for a 575°C 1 min anneal.

References

1. 1)
  - R. Duschl , O.G. Schmidt , G. Reitemann , E. Kasper , K. Eberl . High room temperature peak-to-valley current ratio in Si based Esaki diodes. Electron. Lett. , 13 , 1111 - 1112
2. 2)
  - P.E. Thompson , G.G. Jernigan . Determination of the surface segregation ratio of P in Si(100) during solid-source molecular beam epitaxial growth. Semicond. Sci. Technol. , S80 - S83
3. 3)
  - S.-Y. Chung , N. Jin , R.E. Pavlovicz , P.R. Berger , R. Yu , P.E. Thompson . Analysis of the voltage swing for logic and memory applications in Si/SiGe resonant interband tunnel diodes grown by molecular beam epitaxy. IEEE Trans. Nanotechnol. , 2 , 158 - 163
4. 4)
  - N. Jin , S.-Y. Chung , R. Yu , R. Heyns , P.R. Berger , P.E. Thompson . The effect of spacer thickness on Si-based resonant interband tunneling diode performance and their applications to low power tunneling diode SRAM circuits. IEEE Trans. Electron Devices , 9 , 2243 - 2249
5. 5)
  - S.-Y. Chung , S.-Y. Park , J. Daulton , R. Yu , P.R. Berger , P.E. Thompson . Integration of Si/SiGe HBT and Si-based RITD Demonstrating Controllable Negative Differential Resistance for Wireless Applications. Solid-State Electron. , 6 , 973 - 978
6. 6)
  - S. Sudirgo , R.P. Nandgaonkar , B. Curanovic , J.L. Hebding , R.L. Saxer , S.S. Islam , K.D. Hirschman , S.L. Rommel , S.K. Kurinec , P.E. Thompson , N. Jin , P.R. Berger . Monolithically integrated Si/SiGe resonant interband tunnel diode/CMOS demonstrating low voltage mobile operation. Solid-State Electron. , 1907 - 1910
7. 7)
  - R. Duschl , K. Eberl . Physics and applications of Si/SiGe/Si resonant interband tunneling diodes. Thin Solid Films , 151 - 153
8. 8)
  - H. Jorke , H. Kibbel , K. Strohm , E. Kasper . Forward-bias characteristics of Si bipolar junctions grown by molecular beam epitaxy at low temperatures. Appl. Phys. Lett. , 17 , 2408 - 2410
9. 9)
  - S.Y. Chung . Si/SiGe resonant interband tunnel diode with fr0 20.2 GHz and peak current density 218 kA/cm2 for K-band mixed-signal applications,. IEEE Electron Device Lett. , 364 - 367
10. 10)
  - K.D. Hobart , D.J. Godbey , M.E. Twigg , M. Fatemi , P.E. Thompson , D.S. Simons . Surface segregation and structure of Sb-doped Si(100) films grown atlow temperature by molecular beam epitaxy. Surf. Sci. , 29 - 38

Login

Not registered yet?

Share

Tools

Login to add to favourites

Key

P and B doped Si resonant interband tunnel diodes with as-grown negative differential resistance

P and B doped Si resonant interband tunnel diodes with as-grown negative differential resistance

Buy article PDF

Buy Knowledge Pack

Thank you

References

Related content