Enhancing current spreading by simple electrode pattern design methodology in lateral GaN/InGaN LEDs

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Enhancing current spreading by simple electrode pattern design methodology in lateral GaN/InGaN LEDs

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© The Institution of Engineering and Technology
Published

An electrode pattern design methodology that improves the current uniformity in mesa-structured GaN/InGaN blue light-emitting diodes (LEDs) is investigated. Comparisons between an LED with a new electrode pattern adopting the proposed methodology and an LED with a commercially used electrode are made in view of both current and luminance distributions. Simulations as well as experimental results show that the proposed simple design methodology is very effective to spread current more uniformly in the active layer.

Inspec keywords: gallium compounds; semiconductor device models; light emitting diodes; indium compounds; III-V semiconductors; wide band gap semiconductors; electrodes

Other keywords: current spreading; luminance distribution; electrode pattern design; GaN-InGaN; blue light-emitting diode

Subjects: Semiconductor device modelling, equivalent circuits, design and testing; Light emitting diodes

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