9th International Seminar on Power Semiconductors (ISPS 2008)

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  • Location: Prague, Czech Republic
  • Conference date: 27-29 Aug. 2008
  • ISBN: 978-80-01-04139-0
  • Conference number: 2008/002
  • The following topics are dealt with: experimental and simulation studies of power semiconductor devices such as power semiconductor transistors, power semiconductor bipolar and Schottky diodes, and voltage controlled devices; power integrated circuits; and smart power devices and circuits.

1 - 20 of 52 items found

  • The controlled punch through (CPT) IGBT the next step in buffer optimization for thin wafer technology
  • Failure precursors for insulated gate bipolar transistors (IGBTs)
  • Potentials, limitations, and trends in high voltage silicon power semiconductor devices
  • 3.3 kV IGBTs with an integrated anode voltage sensor
  • Investigation on split-gate RSO MOSFET for 30 V breakdown
  • Negative bias temperature stress and annealing effects in p-channel power VDMOSFETs
  • Analysis of field-plate LDMOS devices for RF applications
  • Scaling of temperature sensors for smart power MOSFETs
  • Integrated submicron switching transistor breaking the Si limit at 100 V
  • Intelligent power module with integrated SOI gate driver IC for medium power applications
  • Self-heating effects on hot carrier reliability in high-voltage 0.35 μm lateral PMOS transistor
  • A novel n-Si/n-SiC hetero-junction power diode
  • Novel MOS-gated thyristor 4-terminal device particularly suited for high-current and high-frequency applications
  • Radiation enhanced diffusion of implanted palladium in a high-power P-i-N diode
  • Advanced design of AlGaN/GaN HEMTs employing mesa field plate for high breakdown voltage
  • A chopper circuit with current injection technique for increasing operating frequency
  • Low leakage current circular AlGaN/GaN Schottky barrier diode
  • Boundary condition adaptive thermal compact models for multi-cooling surfaces and multi-heat sources power packages
  • Analysis of power devices breakdown behaviour by ion beam and electron beam induced charge microscopy
  • Simple design support method for thermal reliability of BGA packages
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