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Three-level Neutral-Point-Clamped voltage source converter is extensively used in high-power and Medium-Voltage applications. 3L-ANPC-VSC was put forward to conquer the unequal losses distribution and supply redundant switch states for zero-level output by replacing the clamping diode with IGBT in 3L-NPC-VSC. The stray inductance takes an important role in the commutation path of the switching current during the switching event. This paper shows two stacking methods of press-pack IGBT 3L-ANPC unit busbar have been designed. The main differences between the two structures are the positions of clamping IGBT(T5 and T6). The total switching power losses for all commutation paths are analyzed. The stray inductance of all the commutation paths have been extracted by means of Three-Dimensional Finite-Elements-Analysis simulations based on the theoretical analysis,. The optimal structures are obtained by optimizing structure according to simulation results. The calculated values have been compared with simulation results obtained from the performance of double-pulse tests for each commutation path. This paper presents all the analysis details of the 3L-ANPC-VSC commutation behavior using 4.5kV and 3kA press-pack IGBT modules.
Inspec keywords: busbars; losses; power bipolar transistors; insulated gate bipolar transistors; switching convertors; finite element analysis; power semiconductor switches; voltage-source convertors
Subjects: Finite element analysis; Bipolar transistors; Relays and switches; Power electronics, supply and supervisory circuits; Insulated gate field effect transistors; Power semiconductor devices; Power convertors and power supplies to apparatus