Designing and verifying the IGBT driver circuit based on M57962AL
Designing and verifying the IGBT driver circuit based on M57962AL
- Author(s): C. Qian 1 ; Z. Jing 2 ; L. Yi 1 ; H. X. Ming 1 ; Q. Peng 1 ; X. J. Zhuo 1 ; W. J. Yi 3
- DOI: 10.1049/icp.2020.0080
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- Author(s): C. Qian 1 ; Z. Jing 2 ; L. Yi 1 ; H. X. Ming 1 ; Q. Peng 1 ; X. J. Zhuo 1 ; W. J. Yi 3
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View affiliations
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Affiliations:
1:
Electric Power Research Institute of State Grid Zhejiang Electric Power Corporation , Hang Zhou, 310014 , China ;
2: Hangzhou Power Supply Company of State Grid Zhejiang Electric Power Company , Hang Zhou, 310014 , China ;
3: State Grid Zhejiang Electric Power Company , Hang Zhou, 310014 , China
Source:
The 16th IET International Conference on AC and DC Power Transmission (ACDC 2020),
2021
p.
163 – 167
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Affiliations:
1:
Electric Power Research Institute of State Grid Zhejiang Electric Power Corporation , Hang Zhou, 310014 , China ;
- Conference: The 16th IET International Conference on AC and DC Power Transmission (ACDC 2020)
- DOI: 10.1049/icp.2020.0080
- ISBN: 978-1-83953-330-3
- Location: Online Conference
- Conference date: 02-03 July 2020
- Format: PDF
In recent years, power electronics technology has been widely used in power systems. IGBT is the most fundamental and core element of high-power power electronics technology, and the driving circuit is the "booster" to maximize IGBT performance. A drive and protection scheme of high power IGBT based on M57962AL is proposed in this paper. The design method of driver parameters is given. The knee point of IGBT output characteristic curve is selected as the threshold of short circuit protection to effectively prevent false protection. Finally, taking FF1200R17KE3_B2 of infineon as an example, the short circuit protection test and high power experimental results verify that the drive circuit has good driving and protection capabilities.
Inspec keywords: driver circuits; insulated gate bipolar transistors; power electronics; power integrated circuits
Subjects: Power integrated circuits; Power electronics, supply and supervisory circuits; Bipolar transistors; Power convertors and power supplies to apparatus; Insulated gate field effect transistors
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