Analysis of the doping fluctuation on robustness of ESD protection devices
Analysis of the doping fluctuation on robustness of ESD protection devices
- Author(s): A. Chvala ; D. Donoval ; P. Beno ; J. Marek ; T. Kosik
- DOI: 10.1049/ic:20080207
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- Author(s): A. Chvala ; D. Donoval ; P. Beno ; J. Marek ; T. Kosik Source: 9th International Seminar on Power Semiconductors (ISPS 2008), 2008 p. 285 – 290
- Conference: 9th International Seminar on Power Semiconductors (ISPS 2008)
- DOI: 10.1049/ic:20080207
- ISBN: 978-80-01-04139-0
- Location: Prague, Czech Republic
- Conference date: 27-29 Aug. 2008
- Format: PDF
Electrostatic discharge (ESD) is a major threat to the reliability of integrated circuits, where approximately 20% of total integrated circuit (IC) failures are due to ESD. Discharge of charged objects or human discharge into IC chip pins with very high currents (up to 10 A) in a short time period (1 ns to 200 ns) causes serious damage to the very sensitive devices of the circuitry. This may happened during manufacturing, assembly, shipment, and in the field. Since the phenomenon is unavoidable, there is a strong need of developing proper strategies to protect the functional devices, circuits and systems. In this paper we present the analysis of the ESD protection structure supported by the advanced 2-D mixed mode electro-thermal device and circuit simulation.
Inspec keywords: integrated circuit reliability; electrostatic discharge; integrated circuit testing; circuit simulation; doping profiles
Subjects: Semiconductor doping; Electrostatics; Reliability; Semiconductor integrated circuit design, layout, modelling and testing
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