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Analysis of power devices breakdown behaviour by ion beam and electron beam induced charge microscopy

Analysis of power devices breakdown behaviour by ion beam and electron beam induced charge microscopy

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Inspec keywords: semiconductor device measurement; ion beam effects; electron beam effects; power semiconductor diodes; semiconductor device breakdown; space charge; EBIC; MOSFET; charge measurement; microscopy

Subjects: Insulated gate field effect transistors; Power semiconductor devices; Radiation effects (semiconductor technology)

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