Radiation enhanced diffusion of implanted palladium in a high-power P-i-N diode
Radiation enhanced diffusion of implanted palladium in a high-power P-i-N diode
- Author(s): J. Vobecky ; V. Zahlava ; V. Komarnitskyy
- DOI: 10.1049/ic:20080189
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- Author(s): J. Vobecky ; V. Zahlava ; V. Komarnitskyy Source: 9th International Seminar on Power Semiconductors (ISPS 2008), 2008 p. 177 – 181
- Conference: 9th International Seminar on Power Semiconductors (ISPS 2008)
- DOI: 10.1049/ic:20080189
- ISBN: 978-80-01-04139-0
- Location: Prague, Czech Republic
- Conference date: 27-29 Aug. 2008
- Format: PDF
The influence of annealing temperature (700, 800°C) and implantation dose (1 × 1013 - 1 × 1014 cm-2 ) of 9.5 MeV Pd on the subsequent Radiation Enhanced Diffusion (RED) is studied in the range of optimal diffusion temperatures (550, 600, 650°C)for the electrical parameters of a power P-I-N diode. Spreading resistance measurements have shown that the Pd dose of 1 × 1014 cm-2 is capable to compensate the anode doping profile in the N-base close to the anode junction similar to that of the RED from sputtered Pd. Contrary to the devices with sputtered Pd, the reproducibility of this process is lower and the radiation damage from the Pd implantation compensates the high doped P layer up to the Pd range (≈ 3.5 μm). The dependences of leakage, carrier lifetime, forward voltage drop and reverse recovery on the process parameters of the Pd layer are shown for 2.5 kV/100 A diode.
Inspec keywords: aluminium; annealing; p-i-n diodes; ion beam effects; carrier lifetime; ion implantation; palladium; elemental semiconductors; silicon; diffusion
Subjects: Semiconductor doping; Radiation effects (semiconductor technology); Annealing processes in semiconductor technology; Junction and barrier diodes
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