The influence of annealing temperature (700, 800°C) and implantation dose (1 × 10¹³ - 1 × 10¹⁴ cm^-2 ) of 9.5 MeV Pd on the subsequent Radiation Enhanced Diffusion (RED) is studied in the range of optimal diffusion temperatures (550, 600, 650°C)for the electrical parameters of a power P-I-N diode. Spreading resistance measurements have shown that the Pd dose of 1 × 10¹⁴ cm^-2 is capable to compensate the anode doping profile in the N-base close to the anode junction similar to that of the RED from sputtered Pd. Contrary to the devices with sputtered Pd, the reproducibility of this process is lower and the radiation damage from the Pd implantation compensates the high doped P layer up to the Pd range (≈ 3.5 μm). The dependences of leakage, carrier lifetime, forward voltage drop and reverse recovery on the process parameters of the Pd layer are shown for 2.5 kV/100 A diode.