Novel MOS-gated thyristor 4-terminal device particularly suited for high-current and high-frequency applications
Novel MOS-gated thyristor 4-terminal device particularly suited for high-current and high-frequency applications
- Author(s): C. Ronsisvalle ; V. Enea ; G. Belverde
- DOI: 10.1049/ic:20080188
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- Author(s): C. Ronsisvalle ; V. Enea ; G. Belverde Source: 9th International Seminar on Power Semiconductors (ISPS 2008), 2008 p. 173 – 176
- Conference: 9th International Seminar on Power Semiconductors (ISPS 2008)
- DOI: 10.1049/ic:20080188
- ISBN: 978-80-01-04139-0
- Location: Prague, Czech Republic
- Conference date: 27-29 Aug. 2008
- Format: PDF
In the wake of the already known ESBT® device in which a high-voltage (>1.0kV) BJT and a low-voltage (<100 V) power MOSFET are connected in cascode mode (the drain of the latter is monolithically connected to the emitter of the former), another novel power device has been developed. The only difference with the ESBT is the replacement of the BJT with an SCR. As a result of fact, thanks to its thyristor structure, the forward characteristic of the new MOS-GTO device is quite different, therefore addressing applications requiring a much higher current density. A CAD study has been completed in order to obtain the best trade-off between the forward voltage drop and the energy losses during switching-off. The electrical results of the first prototypes are compliant with the predictions of the simulations.
Inspec keywords: power MOSFET; current density; MOS-controlled thyristors; electronic engineering computing; CAD; thyristors
Subjects: Electronic engineering computing; Insulated gate field effect transistors; Power semiconductor devices; Thyristors and silicon controlled rectifiers
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