Theoretical evaluation of maximum doping concentration, breakdown voltage and on-state resistance of field-plate compensated devices
Theoretical evaluation of maximum doping concentration, breakdown voltage and on-state resistance of field-plate compensated devices
- Author(s): I. Pawel ; R. Siemieniec ; M. Born
- DOI: 10.1049/ic:20080183
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- Author(s): I. Pawel ; R. Siemieniec ; M. Born Source: 9th International Seminar on Power Semiconductors (ISPS 2008), 2008 p. 55 – 61
- Conference: 9th International Seminar on Power Semiconductors (ISPS 2008)
- DOI: 10.1049/ic:20080183
- ISBN: 978-80-01-04139-0
- Location: Prague, Czech Republic
- Conference date: 27-29 Aug. 2008
- Format: PDF
The idealised on-state resistance vs. breakdown voltage behaviour for field-plate compensated devices is analysed for different impact ionisation models. For small device dimensions, we found a significant deviation from common values of maximum doping concentration due to an overestimated impact ionisation coefficient at higher electric fields. This, in turn, leads to a lower doping density and higher on-state resistance compared to the optimal values.
Inspec keywords: impact ionisation; power MOSFET; charge compensation; electric fields; compensation; electric breakdown; doping
Subjects: Power semiconductor devices; Insulated gate field effect transistors; Semiconductor doping; Dielectric breakdown and discharges
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