For access to this article, please select a purchase option:
IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.
Your recommendation has been sent to your librarian.
Inspec keywords: impact ionisation; power MOSFET; charge compensation; electric fields; compensation; electric breakdown; doping
Subjects: Power semiconductor devices; Insulated gate field effect transistors; Semiconductor doping; Dielectric breakdown and discharges