An experimental design approach to reactive ion etching of indium tin oxide
An experimental design approach to reactive ion etching of indium tin oxide
- Author(s): D. Wood ; S.W. Lavelle ; A. Jackson
- DOI: 10.1049/ic:19950973
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- Author(s): D. Wood ; S.W. Lavelle ; A. Jackson Source: IEE Colloquium on Materials for Displays, 1995 page ()
- Conference: IEE Colloquium on Materials for Displays
The use of reactive ion etching to pattern indium tin oxide (ITO) films is described. A process using ethane/hydrogen plasmas to pattern ITO has been characterised using a statistical analysis of a series of experiments based around a Box-Behnken design. It has been shown that, despite introducing other variables into the process such as electrode temperature and overall gas flow, the only significant factor affecting the etch rate is the plasma power. A model relating etch rate and power is described, with the confidence attributable to the results placed in statistical terms. (7 pages)
Inspec keywords: semiconductor process modelling; semiconductor thin films; indium compounds; design of experiments; tin compounds; sputter etching; semiconductor materials
Subjects: Surface treatment and degradation in semiconductor technology; Oxide and ferrite semiconductors; Surface treatment (semiconductor technology)
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