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P+/N shallow junctions formation on Ge+ preamorphized silicon substrate

P+/N shallow junctions formation on Ge+ preamorphized silicon substrate

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Inspec keywords: silicon; boron; ion implantation; secondary ion mass spectra; p-n junctions; amorphisation; transmission electron microscopy; germanium; elemental semiconductors

Subjects: Electrical properties of semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions; Elemental semiconductors; Semiconductor junctions; Semiconductor doping; Ion beam effects; Doping and implantation of impurities

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