Based on the modules of plasma and electromagnetic field etc. in the commercial software, CFD-ACE+, a two-dimensional discharge model of an inductively coupled plasma (ICP) etcher was built. The spatial distributions of the electron temperature-Te and the electron number density-Ne of the argon plasma were simulated at 10 mTorr, 200 W and 200 secm. One-dimensional distributions profile of the plasma parameters above the wafer's surface for the different chambers and coils were compared. These results demonstrate that the uniformity of the plasma distribution is improved with the height of the chamber and the radius of the coil, and a little enhanced by the modification of the chamber. This study provides the valuable references to design and modify the chamber and the coil for the ICP equipments.