Soft reverse recovery power diodes diffused with iridium
Soft reverse recovery power diodes diffused with iridium
- Author(s): V. Benda ; M. Cernik ; D. Stepkova
- DOI: 10.1049/cp:19960889
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- Author(s): V. Benda ; M. Cernik ; D. Stepkova Source: 6th International Conference on Power Electronics and Variable Speed Drives, 1996 p. 65 – 68
- Conference: 6th International Conference on Power Electronics and Variable Speed Drives
- DOI: 10.1049/cp:19960889
- ISBN: 0 85296 665 2
- Location: Nottingham, UK
- Conference date: 23-25 Sept. 1996
- Format: PDF
It is shown that iridium diffusion can be used as an alternative technique for fabrication of diodes with suitable carrier lifetime gradient in the base, resulting in relatively soft reverse recovery characteristics.
Inspec keywords: power semiconductor switches; carrier lifetime; diffusion; semiconductor doping; power semiconductor diodes; iridium; recovery; silicon; elemental semiconductors
Subjects: Junction and barrier diodes; Semiconductor doping
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