Analysis and simulation of insulated gate bipolar transistor with buffer n'-layer
Analysis and simulation of insulated gate bipolar transistor with buffer n'-layer
- Author(s): V.A. Kuzmin ; S.N. Yurkov ; L.I. Pomortseva
- DOI: 10.1049/cp:19940934
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- Author(s): V.A. Kuzmin ; S.N. Yurkov ; L.I. Pomortseva Source: Proceedings of 5th International Conference on Power Electronics and Variable-Speed Drives, 1994 p. 24 – 28
- Conference: Proceedings of 5th International Conference on Power Electronics and Variable-Speed Drives
Inspec keywords: numerical analysis; Auger effect; electronic engineering computing; energy gap; power bipolar transistors; digital simulation; insulated gate bipolar transistors; carrier lifetime; electron-hole recombination; semiconductor doping; power engineering computing; software packages; carrier mobility; elemental semiconductors; semiconductor device models
Subjects: Power engineering computing; Insulated gate field effect transistors; Semiconductor device modelling, equivalent circuits, design and testing; Semiconductor doping; Bipolar transistors; Electronic engineering computing; Elemental semiconductors