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Analysis and simulation of insulated gate bipolar transistor with buffer n'-layer

Analysis and simulation of insulated gate bipolar transistor with buffer n'-layer

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Inspec keywords: numerical analysis; Auger effect; electronic engineering computing; energy gap; power bipolar transistors; digital simulation; insulated gate bipolar transistors; carrier lifetime; electron-hole recombination; semiconductor doping; power engineering computing; software packages; carrier mobility; elemental semiconductors; semiconductor device models

Subjects: Power engineering computing; Insulated gate field effect transistors; Semiconductor device modelling, equivalent circuits, design and testing; Semiconductor doping; Bipolar transistors; Electronic engineering computing; Elemental semiconductors

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