Integration of high-performance V-band GAN MMIC HPA for the QVlift project [International Communications Satellite Systems Conference]

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Integration of high-performance V-band GAN MMIC HPA for the QVlift project [International Communications Satellite Systems Conference]

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  • DOI:  10.1049/cp.2019.1217
  • ISBN: 978-1-83953-499-7
  • Location: Okinawa, Japan
  • Conference date: 29 Oct.-1 Nov. 2019
  • Format: PDF
In the framework of the Horizon 2020 project QVLIFT, funded by the European Commission, a V-band high power amplifier based on gallium nitride (GaN) monolithic microwave integrated circuits (MMIC) technology was designed and developed. Design manufacturing and on-wafer pulsed measurements of two runs of MMIC fabrication were performed and the best chipsets demonstrated peak output power of about 5 W in pulsed mode. Waveguide modules were integrated and tested and are able to provide up to 2 W at 48 GHz in continuous wave.

Inspec keywords: MMIC power amplifiers; integrated circuit manufacture; integrated circuit measurement; III-V semiconductors; integrated circuit design; waveguides; wide band gap semiconductors; gallium compounds

Subjects: Production facilities and engineering; Amplifiers; Semiconductor integrated circuit design, layout, modelling and testing; Microwave integrated circuits; Analogue circuit design, modelling and testing; Semiconductor industry; Waveguides and microwave transmission lines

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