Actively Aligned Flip-Chip Integration of InP to SiN Utilizing Optical Backscatter Reflectometry
Actively Aligned Flip-Chip Integration of InP to SiN Utilizing Optical Backscatter Reflectometry
- Author(s): M. Theurer ; M. Moehrle ; A. Sigmund ; K.-O. Velthaus ; R.M. Oldenbeuving ; L. Wevers ; F.M. Postma ; R. Mateman ; F. Schreuder ; D. Geskus ; K. Wörhoff ; R. Dekker ; R.G. Heideman ; M. Schell
- DOI: 10.1049/cp.2019.0913
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- Author(s): M. Theurer ; M. Moehrle ; A. Sigmund ; K.-O. Velthaus ; R.M. Oldenbeuving ; L. Wevers ; F.M. Postma ; R. Mateman ; F. Schreuder ; D. Geskus ; K. Wörhoff ; R. Dekker ; R.G. Heideman ; M. Schell Source: 45th European Conference on Optical Communication (ECOC 2019), 2019 page (4 pp.)
- Conference: 45th European Conference on Optical Communication (ECOC 2019)
- DOI: 10.1049/cp.2019.0913
- ISBN: 978-1-83953-185-9
- Location: Dublin, Ireland
- Conference date: 22-26 Sept. 2019
- Format: PDF
We present our hybrid III-V/SiN integration interface with a novel active alignment technique overcoming contacting limitations in flip-chip assembly. The interface allows for integration of single chips and full arrays. An average coupling loss of -2.1dB and a record coupled power exceeding 60mW is achieved.
Inspec keywords: indium compounds; backscatter; silicon compounds; optical fibre couplers; III-V semiconductors; flip-chip devices; reflectometry; integrated optoelectronics
Subjects: Optical refractometry and reflectometry; Fibre couplers and connectors; Product packaging; Integrated optoelectronics
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