Silicon-contacted waveguide integrated Ge/Si avalanche photodiode with 32 GHz bandwidth and multiplication gain >8

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Silicon-contacted waveguide integrated Ge/Si avalanche photodiode with 32 GHz bandwidth and multiplication gain >8

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45th European Conference on Optical Communication (ECOC 2019) — Recommend this title to your library

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  • DOI:  10.1049/cp.2019.0821
  • ISBN: 978-1-83953-185-9
  • Location: Dublin, Ireland
  • Conference date: 22-26 Sept. 2019
  • Format: PDF
We report a waveguide integrated Ge/Si avalanche photodiode with primary responsivity of 0.78 A/W, multiplication gain >8 and a bandwidth of 32 GHz at -12 V. Wide-open eye diagrams are obtained at 8.5 multiplication gain for 25, 40 and 50 Gbps NRZ-OOK data rates.

Inspec keywords: millimetre wave diodes; silicon; amplitude shift keying; optical waveguides; avalanche photodiodes; elemental semiconductors; germanium

Subjects: Solid-state microwave circuits and devices; Junction and barrier diodes; Photoelectric devices; Optical waveguides; Modulation and coding methods

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