Analysis of emitter layer diverse effects on electrical performance for prospective si hybrid solar cell
Analysis of emitter layer diverse effects on electrical performance for prospective si hybrid solar cell
- Author(s): B.K. Ghosh ; A.M. Khairul ; A. Afishah ; I. Saad ; A.I.A. Rani ; S.K. Ghosh
- DOI: 10.1049/cp.2018.1298
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- Author(s): B.K. Ghosh ; A.M. Khairul ; A. Afishah ; I. Saad ; A.I.A. Rani ; S.K. Ghosh Source: 5th IET International Conference on Clean Energy and Technology (CEAT2018), 2018 page (4 pp.)
- Conference: 5th IET International Conference on Clean Energy and Technology (CEAT2018)
- DOI: 10.1049/cp.2018.1298
- ISBN: 978-1-83953-003-6
- Location: Kuala Lumpur, Malaysia
- Conference date: 5-6 Sept. 2018
- Format: PDF
This paper presents two aspects of emitter layer engineering (ELE) in Si solar cells. Firstly Si emitter layer thickness and doping density influence on electrical performance followed by emitter materials choice for hetero-junction (HJ) solar cell (SC) design have been addressed. Due to dynamic loss at the interface, the crystalline silicon solar cell performance limits significantly. Emitter layer diverse parameters choices are key consideration to reduce the loss in Si hetero-junction hybrid solar cell (Si HHSC). Desired parameters of advance emitter materials thermoelectric conduction could link to band gap, Eg for improvement of Si HHSC performance. To realize the rudiments of advance emitter materials crucial parameters in HHSC; firstly self-emitter (due to similar thermo-electric property) has been considered for 100 μm Si wafer. Computer based Si solar cell with emitter layer diverse thickness and doping profile have been analyzed. It is realized that minimum emitter thickness and doping are healthier to electrical efficiency enhancements.
Inspec keywords: doping profiles; solar cells; silicon; elemental semiconductors
Subjects: Solar cells and arrays; Photoelectric conversion; solar cells and arrays
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