Al-AlN thin films have been deposited on two different substrates of Si(111) and sapphire using Plasma Assisted reactive evaporation method. The structural results revealed that the films grown on the both substrates were polycrystalline with better crystallinity for the films deposited on Si(111) substrate. Raman results showed that FWHM of disorder activated B₁(high) phonon mode is narrower for the film deposited on sapphire. A more compact morphology was observed from FESEM image of AlN/Si(111) compared to AlN/sapphire. FTIR spectra showed that the peak of A₁(TO) mode shifted toward higher wavenumbers for AlN thin films grown on sapphire. The results could be effective in Si-based industry and devices such as adjusting solar absorption of a surface built up.