Growth And Characterization of Al-AlN Films By Plasma-Assisted Reactive Evaporation
Growth And Characterization of Al-AlN Films By Plasma-Assisted Reactive Evaporation
- Author(s): M. Alizadeh ; B. Shokri ; N. Abd Rahim
- DOI: 10.1049/cp.2018.1294
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- Author(s): M. Alizadeh ; B. Shokri ; N. Abd Rahim Source: 5th IET International Conference on Clean Energy and Technology (CEAT2018), 2018 page (5 pp.)
- Conference: 5th IET International Conference on Clean Energy and Technology (CEAT2018)
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- DOI: 10.1049/cp.2018.1294
- ISBN: 978-1-83953-003-6
- Location: Kuala Lumpur, Malaysia
- Conference date: 5-6 Sept. 2018
- Format: PDF
Inspec keywords: plasma deposition; wide band gap semiconductors; field emission scanning electron microscopy; semiconductor growth; III-V semiconductors; Fourier transform infrared spectra; phonons; vacuum deposition; Raman spectra; semiconductor thin films; aluminium; X-ray diffraction; aluminium compounds
Subjects: Optical properties of II-VI and III-V semiconductors (thin films, low-dimensional and nanoscale structures); Ion plating and other vapour deposition; Phonons and vibrations in crystal lattices; Infrared and Raman spectra in inorganic crystals; Plasma applications in manufacturing and materials processing; Thin film growth, structure, and epitaxy; II-VI and III-V semiconductors; Vacuum deposition; Solid surface structure; Vacuum deposition