Investigating enhancement mode gallium nitride power FETs in high voltage, high frequency soft switching converters

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Investigating enhancement mode gallium nitride power FETs in high voltage, high frequency soft switching converters

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8th IET International Conference on Power Electronics, Machines and Drives (PEMD 2016) — Recommend this title to your library

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  • DOI:  10.1049/cp.2016.0137
  • ISBN: 978-1-78561-188-9
  • Location: Glasgow, UK
  • Conference date: 19-21 April 2016
  • Format: PDF
An increased attention has been detected to develop smaller and lighter high voltage power converters in the range of 50V to 400V domain. The main applications for these converters are mainly focused for Power over Ethernet (PoE), LED lighting and AC adapters. This work will discuss a study of using enhancement mode gallium nitride switches to form a 50V quasi-square-wave zero-voltage-switching buck converter running at 2-6 MHz under full load. The designed converter achieved 83% efficiency converting 50V input voltage to 12.2V at 9W load.

Inspec keywords: zero voltage switching; III-V semiconductors; gallium compounds; zero current switching; wide band gap semiconductors; DC-DC power convertors; local area networks; light emitting diodes; lighting; power field effect transistors; power semiconductor switches

Subjects: Power electronics, supply and supervisory circuits; Light emitting diodes; Insulated gate field effect transistors; Relays and switches; Power semiconductor devices; DC-DC power convertors

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