Defect-related tunneling contributions to subthreshold forward current in GaN-Based LEDs
Defect-related tunneling contributions to subthreshold forward current in GaN-Based LEDs
- Author(s): M. Mandurrino ; G. Verzellesi ; M. Goano ; S. Dominici ; F. Bertazzi ; G. Ghione ; M. Meneghini ; G. Meneghesso ; E. Zanoni
- DOI: 10.1049/cp.2015.0136
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- Author(s): M. Mandurrino 1 ; G. Verzellesi 2 ; M. Goano 1 ; S. Dominici 1 ; F. Bertazzi 1 ; G. Ghione 1 ; M. Meneghini 3 ; G. Meneghesso 3 ; E. Zanoni 3
- Conference: 2015 Fotonica AEIT Italian Conference on Photonics Technologies
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2015 Fotonica AEIT Italian Conference on Photonics Technologies,
2015
page
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Affiliations:
1: Dipt. di Elettron. e Telecomun., Politec. di Torino, Turin, Italy
2: Dipt. di Sci. e Metodi dell'Ing., Univ. di Modena e Reggio Emilia, Reggio Emilia, Italy
3: Dipt. di Ing. dell'Inf., Univ. di Padova, Padua, Italy
2: Dipt. di Sci. e Metodi dell'Ing., Univ. di Modena e Reggio Emilia, Reggio Emilia, Italy
3: Dipt. di Ing. dell'Inf., Univ. di Padova, Padua, Italy
- DOI: 10.1049/cp.2015.0136
- ISBN: 978-1-78561-068-4
- Location: Turin, Italy
- Conference date: 6-8 May 2015
- Format: PDF
A semi-classical model describing electron and hole trap-assisted tunneling (TAT), which accounts for multiphonon and elastic transitions, is presented and tested on different single-quantum-well light-emitting diode (LED) structures. Our numerical and experimental study confirms that TAT constitutes one of the main contributions to the forward current below the LED optical turn-on.
Inspec keywords: III-V semiconductors; light emitting diodes; phonon-phonon interactions; gallium compounds; wide band gap semiconductors; electron traps; semiconductor quantum wells; tunnel diodes; semiconductor device models; hole traps; quantum well devices; tunnelling
Subjects: Light emitting diodes; Junction and barrier diodes; Semiconductor device modelling, equivalent circuits, design and testing
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