Performance improvement of silicon micro-cavity modulators by iteration of the p-i-n intrinsic region width

A. Al-Saadi; B.A. Franke; S. Kupijai; C. Theiss; H. Rhee; S. Mahdi; L. Zimmermann; D. Stolarek; H.H. Richter; H.J. Eichler; U. Woggon; S. Meister

Performance improvement of silicon micro-cavity modulators by iteration of the p-i-n intrinsic region width

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Author(s): A. Al-Saadi ; B.A. Franke ; S. Kupijai ; C. Theiss ; H. Rhee ; S. Mahdi ; L. Zimmermann ; D. Stolarek ; H.H. Richter ; H.J. Eichler ; U. Woggon ; S. Meister

Source:

39th European Conference and Exhibition on Optical Communication (ECOC 2013),

2013

345 – 347

Conference: 39th European Conference and Exhibition on Optical Communication (ECOC 2013)

DOI: 10.1049/cp.2013.1388

ISBN: 978-1-84919-759-5

Location: London, UK

Conference date: 22-26 Sept. 2013

Format: PDF

The distance between the p⁺- and n⁺-doped regions of the p-i-n diode in micro-cavity modulators represents a compromise between speed and loss. We varied the intrinsic region width to determine the influence on the modulator properties through simulations and experiments. A width of 0.7 μm was found to be the optimal value for modulation operation.

Inspec keywords: silicon; optical losses; elemental semiconductors; integrated optoelectronics; microcavities; p-i-n diodes; optical modulation; micro-optics

Subjects: Other optical system components; Integrated optoelectronics; Optical beam modulators; Micro-optical devices and technology; Junction and barrier diodes; Micro-optical devices and technology

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Performance improvement of silicon micro-cavity modulators by iteration of the p-i-n intrinsic region width

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