Extreme Ultraviolet Lithography (EUVL) is the leading candidate for Next-Generation Lithography in the sub-45 nm regime. One of the key problems to be solved before EUVL can be commercialized is the control of the image placements during the EUVL mask fabrication. This paper focuses on the study and analysis of the EUVL mask blank fabrication process. The relations between the distortions of the EUVL mask and the parameters of the stressed thin film layers have been revealed. Theoretical derivation and numerical analysis in this research provide a solid technical support for the EUVL mask blank fabrication process.