Advantages of P-I-N photovoltaic structures
Advantages of P-I-N photovoltaic structures
- Author(s): G. Golan and A. Axelevitch
- DOI: 10.1049/cp.2010.0854
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- Author(s): G. Golan and A. Axelevitch Source: 7th Mediterranean Conference and Exhibition on Power Generation, Transmission, Distribution and Energy Conversion (MedPower 2010), 2010 page ()
- Conference: 7th Mediterranean Conference and Exhibition on Power Generation, Transmission, Distribution and Energy Conversion (MedPower 2010)
- DOI: 10.1049/cp.2010.0854
- ISBN: 978 1 84919 319 1
- Location: Agia Napa, Cyprus
- Conference date: 7-10 Nov. 2010
- Format: PDF
Direct conversion of solar energy into electricity using the photovoltaic effect suffers of low efficiency. Thus, increasing the efficiency conversion becomes the major goal of solar cells manufacturers. One way to increase efficiency is by applying intrinsic semiconductor widening layer in the depletion zone of a P-N junction. P-I-N based Photovoltaic structures on single-crystalline silicon were built using "Sheet Plasma" sputtering method. Intrinsic silicon films and indium oxide films were grown in series on a conventional p-type silicon wafer. Optical and electrical properties of the deposited films were investigated using laboratory equipment. It was found that the bandgap of the intrinsic silicon layer equals to 1.3 eV and the bandgap of the emitter layer (In2O3) equals to 3.04 eV. Resistivity of the obtained emitter layer was equal to 5.24-10-3 Ω·cm. Efficiency of the photovoltaic structures was no more than 2%. This paper proves feasibility of growing photovoltaic devices using Sheet Plasma sputtering methods. (4 pages)
Inspec keywords: indium compounds; silicon; p-i-n photodiodes; sputter deposition; solar cells; plasma deposition
Subjects: Photoelectric conversion; solar cells and arrays; Sputter deposition; Solar cells and arrays; Deposition by sputtering; Photoelectric devices; Plasma applications in manufacturing and materials processing
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