RF Power Amplifiers
In this thorough overview, Mihai Albulet presents a full account of RF amplifiers and shows that understanding large-signal RF signals is simply a matter of understanding basic principles and their applications. In addition to discussing the basic concepts used in the analysis and design of RF power amplifiers, detailed mathematical derivations indicate the assumptions and limitations of the presented results, allowing the reader to calculate their usefulness in practical designs. Covered are amplification classes, circuit topologies, bias circuits, and matching networks.
Inspec keywords: radiofrequency amplifiers; power amplifiers; modulators; power transistors
Other keywords: RF power amplifiers; modulators; power transistors
Subjects: Power semiconductor devices; Amplifiers; Modulators, demodulators, discriminators and mixers; General electrical engineering topics
- Book DOI: 10.1049/SBEW030E
- Chapter DOI: 10.1049/SBEW030E
- ISBN: 9781884932120
- e-ISBN: 9781613530931
- Format: PDF
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Front Matter
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1 Introduction
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This introduction covers the following topics: ideal parallel-tuned circuit; ideal series-tuned circuit; RF power amplifier efficiency; collector efficiency; overall efficiency; power-added efficiency;and power output capability.
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2 Classic RF Power Amplifiers
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This chapter discusses several types of RF power amplifiers (PAs), most often called Class A, AB, B, and C. Class C amplifiers, in turn, are usually divided into three categories: a) current-source (or underdriven) Class C PAs, b) saturated (or overdriven) Class C PAs, and c) mixed-mode Class C PAs. With the exception of mixed-mode Class C PAs, which behave somewhat differently, the other circuits have the following common features: they have the same basic collector circuit schematic; the circuits are all driven with sinusoidal (or approximately sinusoidal) waveforms; and the active device behaves, at least for a certain portion of the RF cycle, as a controlled-current source.
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3 Class D RF Power Amplifiers
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A Class D amplifier is a switching-mode amplifier that uses two active devices driven in a way that they are alternately switched ON and OFF. The active devices form a two-pole switch that defines either a rectangular voltage or rectangular current waveform at the input of a tuned circuit that includes the load. The load circuit contains a bandor low-pass filter that removes the harmonics of the rectangular waveform and results in a sinusoidal output. In its simpler form, the load circuit can be a series or parallel resonant circuit tuned to the switching frequency; such a load circuit will be considered here. In practical applications, this circuit can be replaced by narrowband pior T-matching circuits, or by bandor low-pass filters (in wideband amplifiers).
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4 Class E Power Amplifiers
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It is desirable to obtain high RF power amplifier efficiency in many practical applications. At least one, if not all, of the following requirements is important: low power consumption (especially for battery-operated equipment), low temperature rise of the components, high reliability, small size, and light weight. Although the parasitic energy losses in, for example, inductors and capacitors are sometimes important, the major power loss in power amplifiers is usually due to power dissipated in the transistor(s). This was true for the Class A, B, and C PAs (their theoretical collector efficiency was calculated in Sections 2.1 through 2.3).
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5 Class F Amplifiers
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Several different power amplifier topologies that provide high efficiency are known as Class F amplifiers. Although these topologies may appear distinct from one another, they all use a multiple-resonator output filter. This filter controls the harmonic content of the collector voltage and/or current, by shaping their waveforms to reduce the power dissipated on the active device. This, in turn, increases the collector efficiency.
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6 Class S Power Amplifiers and Modulators
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The Class S amplifier [1-9] is a switching-mode, high-efficiency (ideally, 100 percent) unit used for amplification of low frequency signals - most often audio frequency (AF) signals. High-efficiency amplification of AF signals is especially important for radio transmitters using collector amplitude modulation (AM). As was discussed in Chapters 2, 3 and 4, collector amplitude modulation of Class C or switching-mode PAs is the most efficient way to generate high power double-sideband (DSB) AM signals (full carrier). Collector AM may be also used to generate DSB suppressed-carrier (SC) AM signals, vestigial-sideband (VSB) AM signals, or single-sideband (SSB) AM signals, employing the envelope elimination and restoration (EER) technique discussed in [10-14]. Note that any band-limited RF signal can be regarded as a simultaneous amplitude and phase modulator of a carrier and be amplified with high efficiency using an EER system. The main reason for requiring very high efficiency from the modulator (essentially, an AF amplifier) is that the AF power, which must be supplied to the RF amplifier, has the same magnitude order as the RF output power. Consequently, the overall efficiency of the transmitter is significantly affected by the modulator efficiency. There are two basic solutions for collector amplitude modulation: transformer-coupled collector modulation (TCCM) and series-coupled collector modulation (SCCM) [1-3, 15-20]. The traditional method of obtaining high-power AM signals (employed by vacuum tube amplifiers) uses a transformer coupled AF PA (usually, Class B operated) to change the supply collector voltage of an RF power amplifier (saturated Class C or Class F1 operated). The block diagram of the TCCM system is presented.
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7 RF Power Transistors
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RF power amplifiers use a wide range of active devices, such as vacuum tubes and transistors (usually BJTs or MOSFETs). Vacuum tubes, still widely used in high-power RF amplifiers.
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Back Matter
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