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Advanced Technologies for Next Generation Integrated Circuits

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Editors: Ashok Srivastava 1 ; Saraju Mohanty 2
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Publication Year: 2020

Although existing nanometer CMOS technology is expected to remain dominant for the next decade, new non-classical devices are being developed as the potential replacements of silicon CMOS, in order to meet the ever-present demand for faster, smaller, more efficient integrate circuits. Many new devices are based on novel emerging materials such as one-dimensional carbon nanotubes and two-dimensional graphene, non-graphene two-dimensional materials, and transition metal dichalcogenides. Such devices use on/off operations based on quantum mechanical current transport, and so their design and fabrication require an understanding of the electronic structures of materials and technologies. Moreover, new electronic design automation (EDA) tools and techniques need to be developed based on integrating devices from emerging novel material-based technologies. The aim of this book is to explore the materials and design requirements of these emerging integrated circuit technologies, and to outline their prospective applications. It will be useful for academics and research scientists interested in future directions and developments in design, materials and applications of novel integrated circuit technologies, and for research and development professionals working at the cutting edge of integrated circuit development.

Inspec keywords: thin film transistors; integrated circuit interconnections; graphene devices; graphene; density functional theory; III-V semiconductors; high-k dielectric thin films; memristors; integrated optoelectronics; memristor circuits; boron compounds; bio-inspired materials; nanoelectronics; molybdenum compounds; wide band gap semiconductors; integrated circuit modelling; semiconductor heterojunctions; tunnel field-effect transistors; CMOS memory circuits; single electron devices; junctionless nanowire transistors

Other keywords: tunnel junctions; density functional theory; nanometer CMOS technologies; organic thin-film transistors; DFT application; optoelectronic applications; DNTT modeling; graphene materials technology; memory devices; advanced technologies; tunnel field-effect transistors; current transport models; low-dimension materials-based interlayer TFET; memristor devices; high-K dielectrics; organic-inorganic heterojunctions; molybdenum disulfide-boron nitride junctionless tunnel effect transistor; memristor-based circuits; graphene-compatible biomaterials; doping-free tunnelling transistors; single electron devices; next generation integrated circuits; interconnects

Subjects: Superconducting junction devices; Integrated optoelectronics; Semiconductor technology; Semiconductor integrated circuits; Semiconductor devices; Dielectric materials and properties; Integrated circuits; General electrical engineering topics; Molecular electronics; Resistors; Digital electronics

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